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| ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S March 2004 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V StealthTM Diode General Description The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Features * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.0 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 45ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V * Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode Package 2 LEAD TO-247 ANODE CATHODE Symbol JEDEC TO-220AC ANODE CATHODE JEDEC TO-263AB K CATHODE (FLANGE) N/C ANODE CATHODE (FLANGE) A CATHODE (BOTTOM SIDE METAL) Device Maximum Ratings TC = 25C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 92oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 1200 1200 1200 18 36 200 125 20 -55 to 150 300 260 Units V V V A A A W mJ C C C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2004 Fairchild Semiconductor Corporation ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Package Marking and Ordering Information Device Marking R18120G2 R18120P2 R18120S3 Device ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S Package TO-247 TO-220AC TO-263AB Tape Width N/A N/A 24mm Quantity 30 50 800 Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 1200V TC = 25C TC = 125C 100 1.0 A mA On State Characteristics VF Instantaneous Forward Voltage IF = 18A TC = 25C TC = 125C 2.7 2.5 3.3 3.1 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 69 pF Switching Characteristics trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 18A, dIF/dt = 100A/s, VR = 30V IF = 18A, dIF/dt = 200A/s, VR = 780V, TC = 25C IF = 18A, dIF/dt = 200A/s, VR = 780V, TC = 125C IF = 18A, dIF/dt = 1000A/s, VR = 780V, TC = 125C 38 60 300 6.5 950 400 7.0 8.0 2.0 235 5.2 22 2.1 370 45 70 ns ns ns A nC ns A C ns A C A/s Thermal Characteristics RJC RJA RJA Thermal Resistance Junction to Case TO-247, TO-220, TO-263 1.0 30 62 C/W C/W C/W Thermal Resistance Junction to Ambient TO-247 Thermal Resistance Junction to Ambient TO-220, TO-263 (c)2004 Fairchild Semiconductor Corporation ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Typical Performance Curves 30 1000 150oC IR, REVERSE CURRENT (A) 25 IF, FORWARD CURRENT (A) 100 125oC 100oC 10 75oC 1 20 15 150oC 10 125oC 100oC 5 25oC 0.1 25oC 0 0.25 0.75 1.25 1.75 2.25 2.75 3.25 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (kV) Figure 1. Forward Current vs Forward Voltage 600 VR = 780V, TC = 125oC tb AT dIF/dt = 200A/s, 500A/s, 800A/s 500 t, RECOVERY TIMES (ns) Figure 2. Reverse Current vs Reverse Voltage 600 VR = 780V, TC = 125oC 500 t, RECOVERY TIMES (ns) tb AT IF = 30A, 15A, 7.5A 400 400 300 300 200 200 100 ta AT dIF/dt = 200A/s, 500A/s, 800A/s 100 ta AT IF = 30A, 15A, 7.5A 0 200 0 0 3 6 9 12 15 18 21 IF, FORWARD CURRENT (A) 24 27 30 400 600 800 1000 1200 1400 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 25 25 VR = 780V, TC = 125oC Figure 4. ta and tb Curves vs dIF/dt VR = 780V, TC = 125oC IF = 30A IF = 15A 20 IF = 7.5A dIF/dt = 800A/s 20 dIF/dt = 600A/s 15 15 10 dIF/dt = 200A/s 10 5 0 3 6 9 12 15 18 21 24 27 30 5 200 400 600 800 1000 1200 1400 IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure 6. Maximum Reverse Recovery Current vs dIF/dt (c)2004 Fairchild Semiconductor Corporation ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Typical Performance Curves (Continued) 10 S, REVERSE RECOVERY SOFTNESS FACTOR 9 8 7 IF = 15A 6 5 4 3 200 IF = 30A QRR, REVERSE RECOVERED CHARGE (nC) VR = 780V, TC = 125oC 3600 3200 IF = 30A 2800 2400 2000 1600 IF = 7.5A 1200 800 200 IF = 15A VR = 780V, TC = 125oC IF = 7.5A 400 600 800 1000 1200 1400 400 600 800 1000 1200 1400 dIF /dt, CURRENT RATE OF CHANGE (A/s) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF/dt 1200 f = 1MHZ CJ , JUNCTION CAPACITANCE (pF) 1000 Figure 8. Reverse Recovered Charge vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) -8.5 IF = 18A, VR = 780V, dIF /dt = 300A/s -9.0 IRM(REC) -9.5 -10.0 -10.5 -11.0 -11.5 tRR -12.0 -12.5 25 400 380 360 340 320 300 280 260 240 150 tRR , RECOVERY TIMES (ns) 800 600 400 200 0 0.01 0.1 1 VR , REVERSE VOLTAGE (V) 10 100 50 75 100 (oC) 125 TC, CASE TEMPERATURE Figure 9. Junction Capacitance vs Reverse Voltage IF(AV), AVERAGE FORWARD CURRENT (A) 20 Figure 10. Reverse Recovery Current and Times vs Case Temperature 15 10 5 0 80 90 100 110 120 130 140 150 TC, CASE TEMPERATURE (oC) Figure 11. DC Current Derating Curve (c)2004 Fairchild Semiconductor Corporation ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Typical Performance Curves (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 1.0 THERMAL IMPEDANCE ZJA, NORMALIZED PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 12. Normalized Maximum Transient Thermal Impedance Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE + MOSFET VDD 0 0.25 IRM IRM dIF dt ta trr tb VGE t1 t2 - Figure 13. trr Test Circuit Figure 14. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV VAVL IL IL t0 t1 t2 t Figure 15. Avalanche Energy Test Circuit Figure 16. Avalanche Current and Voltage Waveforms (c)2004 Fairchild Semiconductor Corporation ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9 |
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